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dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorLu, Yu-Lunen_US
dc.contributor.authorHsueh, Fu-Kuoen_US
dc.contributor.authorHuang, Kuo-Chinen_US
dc.contributor.authorWan, Chia-Chenen_US
dc.contributor.authorCheng, Tz-Yenen_US
dc.contributor.authorHan, Ming-Hungen_US
dc.contributor.authorKowalski, Jeff M.en_US
dc.contributor.authorKowalski, Jeff E.en_US
dc.contributor.authorHeh, Daweien_US
dc.contributor.authorChuang, Hsi-Taen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorWu, Ching-Yien_US
dc.contributor.authorYang, Fu-Liangen_US
dc.date.accessioned2017-04-21T06:49:39Z-
dc.date.available2017-04-21T06:49:39Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-5639-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/134937-
dc.description.abstractFor the first time, CMOS TFTs of 65nm channel length have been demonstrated by using a novel microwave dopant activation technique. A low temperature microwave anneal is. demonstrated and discussed in this study. We have successfully activated the poly-Si gate electrode and source/drain junctions, BF2 for p-MOS TFTs and P-31 for n-MOS TFTs at a low temperature of 320 degrees C without diffusion. The technology is promising for high performance and low cost upper layer nanometer-scale transistors as required by low temperature 3D-ICs fabrication.en_US
dc.language.isoen_USen_US
dc.title3D 65nm CMOS with 320 degrees C Microwave Dopant Activationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETINGen_US
dc.citation.spage27en_US
dc.citation.epage+en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000279343900006en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper