標題: | Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal |
作者: | Lee, Yao-Jen Hsueh, Fu-Kuo Current, Michael I. Wu, Ching-Yi Chao, Tien-Sheng 電子物理學系 Department of Electrophysics |
關鍵字: | Coupling effect;low temperature;microwave anneal;phosphorus;quartz |
公開日期: | 1-二月-2012 |
摘要: | Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, during conventional fixed-frequency microwave heating, standing wave patterns can be established in the microwave processing chamber, resulting in nodes and antinodes over the processing area, resulting in thermal variations over the process wafer. In this letter, the effects of Si or quartz susceptor wafers on dopant activation and sheet resistance uniformity during fixed-frequency microwave anneal are studied. The composition, number, and spacing of susceptor wafers were varied in a systematic fashion in these experiments. |
URI: | http://dx.doi.org/10.1109/LED.2011.2176100 http://hdl.handle.net/11536/15238 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2176100 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 2 |
起始頁: | 248 |
結束頁: | 250 |
顯示於類別: | 期刊論文 |