標題: Susceptor Coupling for the Uniformity and Dopant Activation Efficiency in Implanted Si Under Fixed-Frequency Microwave Anneal
作者: Lee, Yao-Jen
Hsueh, Fu-Kuo
Current, Michael I.
Wu, Ching-Yi
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: Coupling effect;low temperature;microwave anneal;phosphorus;quartz
公開日期: 1-二月-2012
摘要: Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, during conventional fixed-frequency microwave heating, standing wave patterns can be established in the microwave processing chamber, resulting in nodes and antinodes over the processing area, resulting in thermal variations over the process wafer. In this letter, the effects of Si or quartz susceptor wafers on dopant activation and sheet resistance uniformity during fixed-frequency microwave anneal are studied. The composition, number, and spacing of susceptor wafers were varied in a systematic fashion in these experiments.
URI: http://dx.doi.org/10.1109/LED.2011.2176100
http://hdl.handle.net/11536/15238
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2176100
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 2
起始頁: 248
結束頁: 250
顯示於類別:期刊論文


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