標題: | Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing |
作者: | Lee, Yao-Jen Chuang, Shang-Shiun Hsueh, Fu-Kuo Lin, Ho-Ming Wu, Shich-Chuang Wu, Ching-Yi Tseng, Tseung-Yuen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Germanium;low temperature;microwave anneal;phosphorus;rapid thermal anneal (RTA) |
公開日期: | 1-二月-2011 |
摘要: | Phosphorus activated in germanium epitaxy atop Si wafer by low-temperature microwave annealing technique was investigated in this letter. Compared to the conventional RTA process, the temperature of phosphorus activation could be 120 degrees C to 140 degrees C which is an improvement in temperature reduction at the same sheet resistance. According to the SRP, up to 150 degrees C reduction in maximum temperature at the same activation concentration (about 2 x 10(19) cm(-3)) could be achieved. Through adjusting the microwave power and process time, sheet resistance could be decreased while suppressing dopant diffusion. In addition, the inserted susceptor wafers above and below the processing wafer also suppressed the dopant diffusion and improved film roughness. |
URI: | http://dx.doi.org/10.1109/LED.2010.2090937 http://hdl.handle.net/11536/25821 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2010.2090937 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 32 |
Issue: | 2 |
起始頁: | 194 |
結束頁: | 196 |
顯示於類別: | 期刊論文 |