標題: | High Tensile Stress with Minimal Dopant Diffusion by Low Temperature Microwave Anneal |
作者: | Lee, Yao-Jen Lu, Yu-Lun Mu, Zheng-Chang Hsueh, Fu-Kuo Chao, Tien-Sheng Wu, Ching-Yi 電子物理學系 Department of Electrophysics |
公開日期: | 2011 |
摘要: | In this letter, rapid thermal annealing (RTA) and microwave annealing (MA) are compared to demonstrate the dopant activation. Using microwave annealing, the dopant in the Si was well-activated and showed suppressed dopant diffusion, as compared to traditional high temperature RTA. In addition, SiN(x) films after low temperature MA treatment presented higher tensile stress than the films annealed by RTA. Therefore, this MA approach could potentially be applied to these behaviors of I distribution and higher tensile stress SiNx film may be useful in contact etch-stop layer or stress memorization technique in the fabrication of small pitch nanoscaled n-channel Metal-Oxide-Semiconductor Field Effect Transistors. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3536462] All rights reserved. |
URI: | http://hdl.handle.net/11536/26039 http://dx.doi.org/10.1149/1.3536462 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.3536462 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 14 |
Issue: | 5 |
起始頁: | H191 |
結束頁: | H193 |
顯示於類別: | 期刊論文 |