標題: | Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation |
作者: | Lu, Yu-Lun Hsueh, Fu-Kuo Huang, Kuo-Ching Cheng, Tz-Yen Kowalski, Jeff M. Kowalski, Jeff E. Lee, Yao-Jen Chao, Tien-Sheng Wu, Ching-Yi 電子物理學系 Department of Electrophysics |
關鍵字: | Low temperature;metal gate;microwave (MW) anneal;rapid thermal annealing (RTA) |
公開日期: | 1-五月-2010 |
摘要: | In this letter, nanoscale p-MOS TFTs with a TiN gate electrode were realized using a novel microwave (MW) dopant-activation technique. We compared both low-temperature MW annealing and rapid thermal annealing. We successfully activated the source/drain region and suppressed the short-channel effects using low-temperature MW annealing. This technique is promising from the viewpoint of realizing high-performance and low-cost upper layer nanoscale transistors required for low-temperature 3-D integrated circuit fabrication. |
URI: | http://dx.doi.org/10.1109/LED.2010.2042924 http://hdl.handle.net/11536/5452 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2010.2042924 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 31 |
Issue: | 5 |
起始頁: | 437 |
結束頁: | 439 |
顯示於類別: | 期刊論文 |