GaSb-based Mid Infrared Photonic Crystal Surface Emitting Laser

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DC 欄位	值	語言
dc.contributor.author	Pan, Chien Hung	en_US
dc.contributor.author	Lin, Chien Hung	en_US
dc.contributor.author	Chang, Tien Yuan	en_US
dc.contributor.author	Lu, Tien Chang	en_US
dc.contributor.author	Lee, Chien Ping	en_US
dc.date.accessioned	2017-04-21T06:49:13Z	-
dc.date.available	2017-04-21T06:49:13Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-55752-968-8	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134956	-
dc.description.abstract	We demonstrate an optically pumped GaSb-based mid-Infrared photonic crystal surface emitting laser (PCSEL) at 2.3 mu m with line width of 0.3nm. The PCSEL was operated with temperature up to 350K, showing a shift rate of 0.21 nm/K.	en_US
dc.language.iso	en_US	en_US
dc.title	GaSb-based Mid Infrared Photonic Crystal Surface Emitting Laser	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Center for Nanoscience and Technology	en_US
dc.identifier.wosnumber	WOS:000370627101120	en_US
dc.citation.woscount	0	en_US
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