Study on GaN micro-rod growth by nature patterned sapphire substrate

Full metadata record

DC Field	Value	Language
dc.contributor.author	Hsu, S. C.	en_US
dc.contributor.author	Tu, P. M.	en_US
dc.contributor.author	Chen, I. R.	en_US
dc.contributor.author	Cheng, Y. J.	en_US
dc.date.accessioned	2017-04-21T06:49:30Z	-
dc.date.available	2017-04-21T06:49:30Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-3829-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134967	-
dc.description.abstract	In this study, we Investigated the kinetics and etched morphology on sapphire substrate by mixing acid solutions We developed different etching conditions to produce various etching morphology patterns on sapphire surface Then, GaN micro-rod embedded with quantum wells (QWs) were grown on the patterned sapphire surface The cathode luminescence (CL) images of these QW embedded micro-rods have shown great crystal quality.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaN	en_US
dc.subject	MOCVD	en_US
dc.subject	LED	en_US
dc.subject	wet etching	en_US
dc.subject	NPSS	en_US
dc.title	Study on GaN micro-rod growth by nature patterned sapphire substrate	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2	en_US
dc.citation.spage	1287	en_US
dc.citation.epage	+	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000277829300658	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper