GaSe1-xSx Crystals for Teraherz Frequency Range

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Atuchin, Victor V.	en_US
dc.contributor.author	Andreev, Yury M.	en_US
dc.contributor.author	Sarkisov, Sergei Yu.	en_US
dc.contributor.author	Morozov, A. N.	en_US
dc.contributor.author	Luo, C. -W.	en_US
dc.contributor.author	Ku, S. A.	en_US
dc.date.accessioned	2017-04-21T06:49:32Z	-
dc.date.available	2017-04-21T06:49:32Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-4571-4	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/EDM.2009.5173939	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134977	-
dc.description.abstract	GaSe1-xSx single crystals has been grown by Bridgman-Stockbarger technique. Structural quality has been evaluated with TEM observation. Terahertz time-domain spectroscopy has been applied for measurements of the frequency-dependent optical constant of doped GaSe crystals as a function of s-content.	en_US
dc.language.iso	en_US	en_US
dc.subject	Gallium selenide	en_US
dc.subject	doping	en_US
dc.subject	optical properties	en_US
dc.title	GaSe1-xSx Crystals for Teraherz Frequency Range	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/EDM.2009.5173939	en_US
dc.identifier.journal	EDM: 2009 10TH INTERNATIONAL CONFERENCE AND SEMINAR ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES	en_US
dc.citation.spage	96	en_US
dc.citation.epage	99	en_US
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000273519100028	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文