完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHao Ouyangen_US
dc.contributor.authorCheng, Ming-Tingen_US
dc.contributor.authorShiu, Yung-Rueien_US
dc.contributor.authorLo, Shen-Chuanen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorChen, S. Y.en_US
dc.contributor.authorChen, Lih J.en_US
dc.date.accessioned2017-04-21T06:49:33Z-
dc.date.available2017-04-21T06:49:33Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-60768-097-0en_US
dc.identifier.isbn978-1-56677-747-6en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3241575en_US
dc.identifier.urihttp://hdl.handle.net/11536/134998-
dc.description.abstractThe high quality multiple heterostructures of Ni2Si/Si in a nanowire of Si can be formed by using the point contact reaction between several Ni nanodots and a Si nanowire carried out in-situ in an ultrahigh vacuum transmission electron microscopy. The fabricated multi-nano-heterostructures may enhance the development of circuit elements in nano-scale electronic devices. The unusual tetragonal Ni2Si (I4/mcm) phase rather than the commonly observed HCP Ni2Si (P63/m) was identified in the multiple heterostructures of Ni2Si/Si with the existence of surface oxide. The corresponding electronic structure and kinetic paths of phase transformations will be simulated and discussed.en_US
dc.language.isoen_USen_US
dc.titleMultiple heterostructures of Ni2Si/Si formed by the point contact reactionen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3241575en_US
dc.identifier.journalNANOSCALE ONE-DIMENSIONAL ELECTRONIC AND PHOTONIC DEVICES 3 (NODEPD 3)en_US
dc.citation.volume25en_US
dc.citation.issue10en_US
dc.citation.spage41en_US
dc.citation.epage44en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000338760200004en_US
dc.citation.woscount0en_US
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