Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure

doi:10.1149/1.3206625

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Funamiz, K.	en_US
dc.contributor.author	Lin, Y. C.	en_US
dc.contributor.author	Kakushima, K.	en_US
dc.contributor.author	Ahmet, P.	en_US
dc.contributor.author	Tsutsui, K.	en_US
dc.contributor.author	Sugii, N.	en_US
dc.contributor.author	Chang, E. Y.	en_US
dc.contributor.author	Hattori, T.	en_US
dc.contributor.author	Iwai, H.	en_US
dc.date.accessioned	2017-04-21T06:49:32Z	-
dc.date.available	2017-04-21T06:49:32Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-60768-093-2	en_US
dc.identifier.isbn	978-1-56677-743-8	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.3206625	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135005	-
dc.description.abstract	InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.	en_US
dc.language.iso	en_US	en_US
dc.title	Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3206625	en_US
dc.identifier.journal	PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7	en_US
dc.citation.volume	25	en_US
dc.citation.issue	6	en_US
dc.citation.spage	265	en_US
dc.citation.epage	270	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000338086300024	en_US
dc.citation.woscount	3	en_US
顯示於類別：	會議論文