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dc.contributor.authorLiang, C. -T.en_US
dc.contributor.authorChen, K. Y.en_US
dc.contributor.authorWu, Jau-Yangen_US
dc.contributor.authorLin, S. D.en_US
dc.contributor.authorLin, Li-Hungen_US
dc.contributor.authorLi, Yu-Ruen_US
dc.contributor.authorTseng, Yen Shungen_US
dc.contributor.authorYang, Chun-Kaien_US
dc.contributor.authorLin, Po-Tsunen_US
dc.contributor.authorCheng, K. A.en_US
dc.contributor.authorHuang, C. F.en_US
dc.date.accessioned2017-04-21T06:49:34Z-
dc.date.available2017-04-21T06:49:34Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2399-6en_US
dc.identifier.urihttp://dx.doi.org/10.1109/CPEM.2008.4574821en_US
dc.identifier.urihttp://hdl.handle.net/11536/135030-
dc.description.abstractMagneto-transport measurements are performed on the AlGaAs/GaAs quantum Hall (QH) devices fabricated recently by our group. A series of Hall plateaus are observed with increasing the perpendicular magnetic field, and the mobility gaps resulting from localization effects are investigated at the minima in the longitudinal resistivity. Only the gap corresponding to the filling factor i=2 is close to the expected cyclotron energy, and our study supports that the low-field QH conductors may suffer problems due to insufficient localization. The anomalous change on the Hall slope is observed when the i=3 plateau is destroyed by the large current.en_US
dc.language.isoen_USen_US
dc.titleProbing mobility gaps at resistivity minima in the integer quantum Hall effecten_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/CPEM.2008.4574821en_US
dc.identifier.journal2008 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS DIGESTen_US
dc.citation.spage398en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000257775400199en_US
dc.citation.woscount1en_US
Appears in Collections:Conferences Paper