Design of Low Noise Amplifier in Common-Gate Configuration for Ultra-Wideband Applications

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DC 欄位	值	語言
dc.contributor.author	Kao, Yao Huang	en_US
dc.contributor.author	Hsieh, Chia Hung	en_US
dc.date.accessioned	2017-04-21T06:49:11Z	-
dc.date.available	2017-04-21T06:49:11Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-0748-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135117	-
dc.description.abstract	A new 3-10 GHz ultra-wide-band (UWB) low noise amplifier (LNA) is designed in TSMC 0.18um CMOS process. Reactive matching of common gate configuration is extended to wide bandwidth using the Butterworth filter. A systematic approach to design a wide band low noise amplifiers is especially emphasized. The amplifier with on-chip filter spanning 3-10GHz delivers 7dB gain, 4dB noise figure, and -2dBm input IP3 at 6GHz, with power consumption 7.6mW. The input and output return loss (S11 and S22) are verified to be less than -10dB. The comparisons of the measurement results are also indicated.	en_US
dc.language.iso	en_US	en_US
dc.subject	Ultra-wideband	en_US
dc.subject	Low-noise amplifier	en_US
dc.title	Design of Low Noise Amplifier in Common-Gate Configuration for Ultra-Wideband Applications	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5	en_US
dc.citation.spage	412	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000261353300106	en_US
dc.citation.woscount	0	en_US
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