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dc.contributor.authorLai, Chao Sungen_US
dc.contributor.authorHuang, D. C.en_US
dc.contributor.authorChung, S. S.en_US
dc.date.accessioned2017-04-21T06:49:10Z-
dc.date.available2017-04-21T06:49:10Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-1891-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/135141-
dc.language.isoen_USen_US
dc.titleDimensional Dependences of the Dynamic-NBTI with 1.2 nm N20-ISSG oxynitridesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2en_US
dc.citation.spage254en_US
dc.citation.epage+en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000255857100130en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper