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dc.contributor.authorYang, Hung-Pin D.en_US
dc.contributor.authorLiu, Jui-Nungen_US
dc.contributor.authorLai, Fang-, Ien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorXuan, Rongen_US
dc.contributor.authorChi, Jim Y.en_US
dc.date.accessioned2017-04-21T06:49:09Z-
dc.date.available2017-04-21T06:49:09Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-1173-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/135153-
dc.description.abstractAn oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom DBR, quantum wells, and top DBR, with a holey structure for light extraction. The internally reflected spontaneous emission can be extracted out of the etched hole.en_US
dc.language.isoen_USen_US
dc.titleP-substrate small-aperture holey light-emitting diodes for fiber-optic applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4en_US
dc.citation.spage975en_US
dc.citation.epage+en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000256956600493en_US
dc.citation.woscount0en_US
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