Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

doi:10.1002/pssc.200674825

Full metadata record

DC Field	Value	Language
dc.contributor.author	Feng, Shih-Wei	en_US
dc.contributor.author	Pan, C. C.	en_US
dc.contributor.author	Chyi, Jen-Inn	en_US
dc.contributor.author	Kuo, Chien-Nan	en_US
dc.contributor.author	Chen, Kuei-Hsien	en_US
dc.date.accessioned	2017-04-21T06:49:08Z	-
dc.date.available	2017-04-21T06:49:08Z	-
dc.date.issued	2007	en_US
dc.identifier.issn	1862-6351	en_US
dc.identifier.uri	http://dx.doi.org/10.1002/pssc.200674825	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135168	-
dc.description.abstract	Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.	en_US
dc.language.iso	en_US	en_US
dc.title	Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1002/pssc.200674825	en_US
dc.identifier.journal	PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007	en_US
dc.citation.volume	4	en_US
dc.citation.issue	7	en_US
dc.citation.spage	2716	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000248047600124	en_US
dc.citation.woscount	1	en_US
Appears in Collections:	Conferences Paper