High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Nandi, S. K.	en_US
dc.contributor.author	Tiwari, Jitendra N.	en_US
dc.date.accessioned	2017-04-21T06:49:08Z	-
dc.date.available	2017-04-21T06:49:08Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-1727-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135170	-
dc.description.abstract	Ultrathin Ta2O5 films have been deposited oil ZnO/n-Si substrate by microwave plasma enhanced chemical vapor deposition technique. Using metal insulator semiconductor (MIS) capacitor structures, the capacitance-voltage and the leakage Current characteristics of Ta2O5 films have been investi-ated in the temperature range of 27-200 degrees C. Poole-Frenkel current conduction mechanism was found to be dominated at high temperature.	en_US
dc.language.iso	en_US	en_US
dc.title	High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007	en_US
dc.citation.spage	417	en_US
dc.citation.epage	+	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000254274500101	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文