標題: Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack
作者: Liu, Chien
Chen, Ping-Guang
Xie, Meng-Jie
Liu, Shao-Nong
Lee, Jun-Wei
Huang, Shao-Jia
Liu, Sally
Chen, Yu-Sheng
Lee, Heng-Yuan
Liao, Ming-Han
Chen, Pang-Shiu
Lee, Min-Hung
電子物理學系
Department of Electrophysics
公開日期: Apr-2016
摘要: The concept of ferroelectric (FE) negative capacitance (NC) may be a turning point in overcoming the physical limitations imposed by the Boltzmann tyranny to realize next-generation state-of-the-art devices. Both the body factor (m-factor) and the transport mechanism (n-factor) are simultaneously improved by integrating an NC with a tunnel FET (TFET). The modeling approach is discussed in this study as well as the NC physics. By optimizing the thicknesses of FE, semiconductor, and interfacial layers, the capacitance of the FE layers is modulated to match that of a MOS resulting in the smallest subthreshold swing that is also hysteresis-free. An ultrathin-body double gate tunnel FET (UTB-DG-TFET) exhibits a steep slope (a subthreshold swing below 10 mV/dec over more than 4 orders of magnitude) for low-power applications (<0.2V switching voltage) to realize next-generation state-of-the-art devices. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.04EB08
http://hdl.handle.net/11536/135179
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.04EB08
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 55
Issue: 4
Appears in Collections:Conferences Paper