標題: <bold>Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory</bold>
作者: Gu, S. H.
Li, C. W.
Wang, Tahui
Lu, W. P.
Chen, K. C.
Ku, Joseph
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2006
摘要: Program/erase cycling stress induced read current fluctuations arising from random telegraph noise (RTN) in a localized storage, multi-level nitride flash memory (SONOS) is explored. Our study shows that localized charge storage significantly enhances RTN. The amplitude of RTN varies in different program levels of a multi-level cell. The broadening of read current distribution due to RTN is characterized and modeled. Improvement of bottom oxide robustness can reduce the read current fluctuations.
URI: http://hdl.handle.net/11536/135213
ISBN: 978-1-4244-0438-4
期刊: 2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2
起始頁: 214
結束頁: +
顯示於類別:會議論文