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dc.contributor.authorYang, Ping-Fengen_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorLai, Yi-Shaoen_US
dc.contributor.authorChen, Tsan-Hsienen_US
dc.contributor.authorChen, Rong-Shengen_US
dc.date.accessioned2017-04-21T06:48:24Z-
dc.date.available2017-04-21T06:48:24Z-
dc.date.issued2006en_US
dc.identifier.isbn978-1-4244-0734-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/135216-
dc.description.abstractIn this study, the deformation behavior of single-crystal Si (100) was examined using nanoindentation, followed by analysis using cross-sectional transmission electron microscopy (XTEM), scanning electron microscopy (SEM), and Raman microspectroscopy. XTEM samples were prepared by focused ion beam (FIB) milling to accurately position the cross-section through the indentations. The deformation via phase transformation was clearly observed with micro-Raman and XTEM, showing the presence of high-pressure crystalline phases Si-Ill and Si-XII following pressure release. The indentation fracture toughness of Si is also discussed.en_US
dc.language.isoen_USen_US
dc.titleNanoindentation-induced phase transformation of siliconen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY CONFERENCE TAIWAN (IMPACT), PROCEEDINGSen_US
dc.citation.spage119en_US
dc.citation.epage+en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000245078100027en_US
dc.citation.woscount1en_US
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