完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yang, Ping-Feng | en_US |
dc.contributor.author | Jian, Sheng-Rui | en_US |
dc.contributor.author | Lai, Yi-Shao | en_US |
dc.contributor.author | Chen, Tsan-Hsien | en_US |
dc.contributor.author | Chen, Rong-Sheng | en_US |
dc.date.accessioned | 2017-04-21T06:48:24Z | - |
dc.date.available | 2017-04-21T06:48:24Z | - |
dc.date.issued | 2006 | en_US |
dc.identifier.isbn | 978-1-4244-0734-7 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135216 | - |
dc.description.abstract | In this study, the deformation behavior of single-crystal Si (100) was examined using nanoindentation, followed by analysis using cross-sectional transmission electron microscopy (XTEM), scanning electron microscopy (SEM), and Raman microspectroscopy. XTEM samples were prepared by focused ion beam (FIB) milling to accurately position the cross-section through the indentations. The deformation via phase transformation was clearly observed with micro-Raman and XTEM, showing the presence of high-pressure crystalline phases Si-Ill and Si-XII following pressure release. The indentation fracture toughness of Si is also discussed. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Nanoindentation-induced phase transformation of silicon | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2006 INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY CONFERENCE TAIWAN (IMPACT), PROCEEDINGS | en_US |
dc.citation.spage | 119 | en_US |
dc.citation.epage | + | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000245078100027 | en_US |
dc.citation.woscount | 1 | en_US |
顯示於類別: | 會議論文 |