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dc.contributor.authorWang, C. H.en_US
dc.contributor.authorKe, C. C.en_US
dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorLi, J. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:02:43Z-
dc.date.available2014-12-08T15:02:43Z-
dc.date.issued2011-01-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2010.09.046en_US
dc.identifier.urihttp://hdl.handle.net/11536/1352-
dc.description.abstractInternal quantum efficiency (IQE) of InGaN/GaN UV LEDs with patterned sapphire substrates (PSS) was investigated using electroluminescence (EL) and photoluminescence (PL) methods. The physical mechanisms that affect temperature-dependent EL efficiency as a function of injected carrier density were deduced. In order to reduce the density of non-radiative recombination centers to improve quantum efficiency, improvement of crystal quality and reduction in the number of defects are necessary. PSS LEDs showed better EL characteristics than non-PSS LEDs because of the improved epitaxial quality. Contrary to PL IQE, EL IQE was significantly affected by carrier injection efficiency, especially at low temperature when high bias voltage was applied to the p-n junction. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSubstratesen_US
dc.subjectMetalorganic chemical vapor depositionen_US
dc.subjectNitridesen_US
dc.subjectLight emitting diodesen_US
dc.titleStudy of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence methoden_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2010.09.046en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume315en_US
dc.citation.issue1en_US
dc.citation.spage242en_US
dc.citation.epage245en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000287558400055-
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