Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsieh, Chi-Chang | en_US |
dc.contributor.author | Lai, Fang-, I | en_US |
dc.contributor.author | Wang, Hsun-Wen | en_US |
dc.date.accessioned | 2017-04-21T06:50:18Z | - |
dc.date.available | 2017-04-21T06:50:18Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.isbn | 978-1-4799-3299-3 | en_US |
dc.identifier.issn | 0160-8371 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135364 | - |
dc.description.abstract | The influence of band structure and indium composition of stepping layer are numerically investigated on the photovoltaic characteristics of InGaN/GaN MQW solar cell. In this study, the barrier structure and indium composition of inserting stepping layer leads to a substantial influence in the cell efficiency and output short circuit current density. It reveals that L-structure in barrier modulation would contribute to fine carrier collection and increase the conversion efficiency. Moreover, L-structure barrier modulation would effectively reduce the recombination rate in wells near p-GaN side where dominant recombination in well regions is. Barrier height of stepping layers plays an important role in high carrier collection that keeps high conversion efficiency. However, the optimal 5% indium composition of L-structure 14-pair MQW solar cell would obtain the best performance. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | MQW | en_US |
dc.subject | piezoelectric polarization | en_US |
dc.subject | spontaneous polarization | en_US |
dc.subject | wurtzite | en_US |
dc.subject | stain | en_US |
dc.title | Influence of barrier thickness modulation of InGaN/GaN MQW solar cells | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | en_US |
dc.citation.spage | 2089 | en_US |
dc.citation.epage | 2091 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000340054100469 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |