完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLu, Yu-Jungen_US
dc.contributor.authorKim, Jisunen_US
dc.contributor.authorChen, Hung-Yingen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorShih, Chih-Kangen_US
dc.contributor.authorGwo, Shangjren_US
dc.date.accessioned2017-04-21T06:50:03Z-
dc.date.available2017-04-21T06:50:03Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-6476-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/135376-
dc.description.abstractDiffraction-unlimited semiconductor nanolasers are demonstrated by using single shape-controlled InGaN/GaN core-shell nanorods as laser gain media on Ag films epitaxially grown on Si substrates. The use of atomically smooth Ag films allows us to fabricate low-loss plasmonic cavities for ultralow-threshold, continuous-wave (CW) nanolaser operation above liquid nitrogen temperature. Furthermore, the tunable band-gap energy of the InxGa1-xN alloy makes it possible to realize laser emission in the full visible spectrum.en_US
dc.language.isoen_USen_US
dc.titleAll-Color Plasmonic Nanolasers with Ultralow Thresholdsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000334176100229en_US
dc.citation.woscount0en_US
顯示於類別:會議論文