Using Injection-Locked Fabry-Perot Laser Diode with 10% Frond-Facet Reflectivity for 10 Gbps Upstream PON Access

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, C. H.	en_US
dc.contributor.author	Chen, H. Y.	en_US
dc.contributor.author	Chow, C. W.	en_US
dc.contributor.author	Liu, Y. L.	en_US
dc.contributor.author	Chen, J.	en_US
dc.date.accessioned	2017-04-21T06:50:04Z	-
dc.date.available	2017-04-21T06:50:04Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-6476-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135379	-
dc.description.abstract	We demonstrate a 10-Gbit/s upstream 16-QAM OFDM signal transmission using injection-locked Fabry-Perot laser diode with 10% frond-facet reflectivity for the long-reach PON access. Moreover, the relationship of BER and injection power is also analyzed.	en_US
dc.language.iso	en_US	en_US
dc.title	Using Injection-Locked Fabry-Perot Laser Diode with 10% Frond-Facet Reflectivity for 10 Gbps Upstream PON Access	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000334176100582	en_US
dc.citation.woscount	0	en_US
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