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dc.contributor.authorKuo, SYen_US
dc.contributor.authorHsieh, WFen_US
dc.date.accessioned2014-12-08T15:18:50Z-
dc.date.available2014-12-08T15:18:50Z-
dc.date.issued2005-07-01en_US
dc.identifier.issn0734-2101en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.1938979en_US
dc.identifier.urihttp://hdl.handle.net/11536/13537-
dc.description.abstractEr-doped Ba0.7Sr0.3TiO3 (BST:Er) thin films prepared by the sol-gel technique have been investigated by means of x-ray diffraction (XRD), Raman, spectroscopic ellipsometry, Capacitance-voltage, and photoluminescence (PL) measurements. XRD results indicate that the film possess the highest degree of crystallinity at the annealing temperature of 700 degrees C. The dependence of the refractive index on erbium concentration was also analyzed. In addition, the excitation-dependent PL studies indicate that the green emission peaks do not shift with the change in excitation power, while the integrated intensity increases monotonically with the increase in excitation power. The quenching mechanism of the green emission due to dopant concentrations and annealing temperatures was discussed in detail. All experimental results indicate that BST:Er thin films might be a potential candidate for optoelectronics devices. (c) 2005 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleStructural and optical properties of erbium-doped Ba0.7Sr0.3TiO3 thin filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1116/1.1938979en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Aen_US
dc.citation.volume23en_US
dc.citation.issue4en_US
dc.citation.spage768en_US
dc.citation.epage772en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000230717200039-
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