標題: Electrical Improvement of MIS Capacitor with HfAlOx Gate Dielectrics Treated by Dual Plasma Treatment
作者: Deng, I-Chung
Chang, Kow-Ming
Chang, Ting-Chia
Chang, Po-Chun
Huang, Bo-Wen
Wu, Chien-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: High dielectric constant materials (high-k) such as Hf-based thin films are the promising candidates for 45-nm CMOS technology. It has been described that nitridation processes could improve thermal stability and dielectric constants of Hf-based dielectrics. Furthermore, fluorine incorporation into high-k dielectric was also proposed in order to suppress leakage current and passivate defects. In this study, we examined dual plasma treatment (CF4 pretreatment and N-2 post-treatment) on HfAlOx thin films in order to improve electrical characteristics. Based on our experimental results, HfAlOx Metal-Insulator-Semiconductor (MIS) capacitor properties such as capacitance density, gate leakage current density, and hysteresis could be successfully improved. Compared to untreated samples, capacitance is 42.5% higher and gate leakage is suppressed about three orders when dual plasma treatment is used. According to this study, dual plasma treatment would be an effective technology to improve the electrical characteristic of HfAlOx thin films.
URI: http://dx.doi.org/10.1149/1.3700955
http://hdl.handle.net/11536/135462
ISBN: 978-1-60768-316-2
978-1-56677-958-6
ISSN: 1938-5862
DOI: 10.1149/1.3700955
期刊: SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 2
Volume: 45
Issue: 6
起始頁: 211
結束頁: 218
顯示於類別:會議論文