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dc.contributor.authorHsieh, Tien-Yuen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Te-Chihen_US
dc.contributor.authorTsai, Ming-Yenen_US
dc.contributor.authorChen, Yu-Teen_US
dc.contributor.authorJian, Fu-Yenen_US
dc.date.accessioned2017-04-21T06:49:55Z-
dc.date.available2017-04-21T06:49:55Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-60768-317-9en_US
dc.identifier.isbn978-1-56677-959-3en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3701533en_US
dc.identifier.urihttp://hdl.handle.net/11536/135463-
dc.description.abstractThis paper investigates the degradation mechanism of amorphous InGaZnO thin-film transistors under DC and AC gate bias stress. Comparing the degradation behavior at equal accumulated effective stress time, more pronounced threshold voltage shift under AC positive gate bias stress in comparison with DC stress indicates extra electron-trapping phenomenon occurs in the duration of rising/falling time in pulse. Contrarily, illuminated AC negative gate bias stress exhibits much less threshold voltage shift than DC stress, which suggesting the photo-generated hole does not has sufficient time to drift to the interface of IGZO/gate insulator and causes hole-trapping under AC operation. Since the evolution of threshold voltage fits the stretched-exponential equation well, the different degradation tendencies under DC/AC stress can be attributed to the different electron-and hole-trapping efficiencies, and this is further verified by varying pulse waveform.en_US
dc.language.isoen_USen_US
dc.titleInvestigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stressen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3701533en_US
dc.identifier.journalWIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13en_US
dc.citation.volume45en_US
dc.citation.issue7en_US
dc.citation.spage133en_US
dc.citation.epage140en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000316687500015en_US
dc.citation.woscount1en_US
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