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dc.contributor.authorLin, Wei-Hsunen_US
dc.contributor.authorTseng, Chi-Cheen_US
dc.contributor.authorWu, Shung-Yien_US
dc.contributor.authorWu, Meng-Hsunen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2017-04-21T06:49:55Z-
dc.date.available2017-04-21T06:49:55Z-
dc.date.issued2012en_US
dc.identifier.issn1862-6351en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssc.201100246en_US
dc.identifier.urihttp://hdl.handle.net/11536/135491-
dc.description.abstractIn this paper, GaSb nanostructures prepared under different Sb/background As ratios are investigated. With decreasing Sb/background As ratios, the morphologies of GaSb nanostructure changing from quantum dots (QDs) to quantum rings (QRs) are observed. The higher optical recombination probabilities of GaSb QRs are attributed to enhanced electron-hole wave function overlapping and more surrounding electrons around the GaSb QR core shell. With well-control Sb/background As ratios, the high-temperature operation GaSb quantum-dot infrared photodetector (QDIP) with simple stacked structure has been demonstrated. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoen_USen_US
dc.subjectGaSb/GaAs quantum dotsen_US
dc.subjectquantum dot infrared photodetectorsen_US
dc.titleThe influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectorsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1002/pssc.201100246en_US
dc.identifier.journalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2en_US
dc.citation.volume9en_US
dc.citation.issue2en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000301540900040en_US
dc.citation.woscount5en_US
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