Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsu, Po-Yen | en_US |
dc.contributor.author | Wu, Chun-Yu | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.contributor.author | Wu, You-Lin | en_US |
dc.contributor.author | Chang, Wei-Tzu | en_US |
dc.contributor.author | Shen, Yuan-Lin | en_US |
dc.contributor.author | Chang, Che-Ming | en_US |
dc.contributor.author | Wang, Chia-Chung | en_US |
dc.contributor.author | Lin, Jing-Jenn | en_US |
dc.date.accessioned | 2017-04-21T06:49:51Z | - |
dc.date.available | 2017-04-21T06:49:51Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.isbn | 978-1-4577-1997-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135504 | - |
dc.description.abstract | Multiple poly-silicon nanowires (PS-NW\'s) coated with different high-k dielectric materials, HfO2, Al2O3, and TiO2, were fabricated and their pH sensing characteristics were compared. Sidewall spacer formation technique was used for the PS-NW\'s fabrication and all the high-k materials were deposited by atomic-layer-deposition (ALD). Following the high-k dielectric deposition, a 3-aminopropyltriethoxysilane (gamma-APTES) layer was coated as sensing membrane. It is found that the multiple PS-NW sensor coated with HfO2 exhibits the highest sensitivity and best reproducibility for pH sensing. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Atomic-layer-deposition | en_US |
dc.subject | high-k dielectric materials | en_US |
dc.subject | pH sensor | en_US |
dc.subject | multiple polysilicon nanowires | en_US |
dc.subject | FIB-processed C-AFM tip | en_US |
dc.title | Comparison of Multiple-Polysilicon-Nanowire pH-Sensors Coated with Different ALD-Deposited High-k Dielectric Materials | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000304037500119 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |