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dc.contributor.authorHsu, Po-Yenen_US
dc.contributor.authorWu, Chun-Yuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.contributor.authorWu, You-Linen_US
dc.contributor.authorChang, Wei-Tzuen_US
dc.contributor.authorShen, Yuan-Linen_US
dc.contributor.authorChang, Che-Mingen_US
dc.contributor.authorWang, Chia-Chungen_US
dc.contributor.authorLin, Jing-Jennen_US
dc.date.accessioned2017-04-21T06:49:51Z-
dc.date.available2017-04-21T06:49:51Z-
dc.date.issued2011en_US
dc.identifier.isbn978-1-4577-1997-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/135504-
dc.description.abstractMultiple poly-silicon nanowires (PS-NW\'s) coated with different high-k dielectric materials, HfO2, Al2O3, and TiO2, were fabricated and their pH sensing characteristics were compared. Sidewall spacer formation technique was used for the PS-NW\'s fabrication and all the high-k materials were deposited by atomic-layer-deposition (ALD). Following the high-k dielectric deposition, a 3-aminopropyltriethoxysilane (gamma-APTES) layer was coated as sensing membrane. It is found that the multiple PS-NW sensor coated with HfO2 exhibits the highest sensitivity and best reproducibility for pH sensing.en_US
dc.language.isoen_USen_US
dc.subjectAtomic-layer-depositionen_US
dc.subjecthigh-k dielectric materialsen_US
dc.subjectpH sensoren_US
dc.subjectmultiple polysilicon nanowiresen_US
dc.subjectFIB-processed C-AFM tipen_US
dc.titleComparison of Multiple-Polysilicon-Nanowire pH-Sensors Coated with Different ALD-Deposited High-k Dielectric Materialsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000304037500119en_US
dc.citation.woscount0en_US
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