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dc.contributor.authorHsiao, Yu-Chihen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorTsung, Kuan-Changen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2017-04-21T06:48:28Z-
dc.date.available2017-04-21T06:48:28Z-
dc.date.issued2011en_US
dc.identifier.isbn978-0-85825-974-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/135519-
dc.description.abstractThis paper proposed a Ka-band divide-by-two quadrature-outputs regenerative divider using the 0.15-mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The circuit topology consists of one Marchand balun and two Miller dividers. The input Marchand balun with accurately balanced outputs and symmetrical path routing bring about the precisely quadrature outputs of the divider, while the divider operates up to high frequencies thanks to the high performance of the 0.15-mu m pHEMT technology and a semi-insulating substrate. The divider includes a single side-band (SSB) up-converter to verify the quadrature accuracy of the divider\'s outputs. A 35-dB side-band rejection ratio is achieved. The minimum input sensitivity equals 2.7 dBm. The stable division from 32 to 36 GHz in a fractional bandwidth of 12 % can be obtained. This regenerative frequency divider power consumption is 106 mW. Without the SSB test circuit, the layout size is 1.37 x 1.6 mm(2).en_US
dc.language.isoen_USen_US
dc.subjectmiller divideren_US
dc.subjectmarchand balunen_US
dc.titleA Ka-Band pHEMT Regenerative Frequency Divider With Quadrature Outputsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalASIA-PACIFIC MICROWAVE CONFERENCE 2011en_US
dc.citation.spage387en_US
dc.citation.epage390en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000394376200098en_US
dc.citation.woscount0en_US
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