Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors

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DC Field	Value	Language
dc.contributor.author	Teng, Li-Feng	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Fuh, Chur-Shyang	en_US
dc.contributor.author	Chou, Yi-Teh	en_US
dc.contributor.author	Li, Fu-Hai	en_US
dc.contributor.author	Chang, Chih-Hsiang	en_US
dc.contributor.author	Shieh, Han-Ping D.	en_US
dc.date.accessioned	2017-04-21T06:48:29Z	-
dc.date.available	2017-04-21T06:48:29Z	-
dc.date.issued	2011	en_US
dc.identifier.issn	1883-2490	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135533	-
dc.description.abstract	We studied wavelength dependent photo-responses in amorphous nitrogenated InGaZnO thin-film transistors (a-IGZO:N TFTs). The a-IGZO:N active layer was deposited by dc reactive sputter with a nitrogen and argon gas mixture at room temperature and performed the superior characteristics while comparing with the intrinsic IGZO TFTs.	en_US
dc.language.iso	en_US	en_US
dc.title	Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3	en_US
dc.citation.spage	113	en_US
dc.citation.epage	115	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000393147800027	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper