Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors

Abstract

We studied wavelength dependent photo-responses in amorphous nitrogenated InGaZnO thin-film transistors (a-IGZO:N TFTs). The a-IGZO:N active layer was deposited by dc reactive sputter with a nitrogen and argon gas mixture at room temperature and performed the superior characteristics while comparing with the intrinsic IGZO TFTs.