標題: Electrical performance and photo-responses enhancement by in situ nitrogen incorporation to amorphous InGaZnO thin-film transistors
作者: Teng, Li-Feng
Liu, Po-Tsun
Fuh, Chur-Shyang
Chou, Yi-Teh
Li, Fu-Hai
Chang, Chih-Hsiang
Shieh, Han-Ping D.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 2011
摘要: We studied wavelength dependent photo-responses in amorphous nitrogenated InGaZnO thin-film transistors (a-IGZO:N TFTs). The a-IGZO:N active layer was deposited by dc reactive sputter with a nitrogen and argon gas mixture at room temperature and performed the superior characteristics while comparing with the intrinsic IGZO TFTs.
URI: http://hdl.handle.net/11536/135533
ISSN: 1883-2490
期刊: IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
起始頁: 113
結束頁: 115
Appears in Collections:Conferences Paper