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dc.contributor.authorLu, Zheng-Liangen_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2017-04-21T06:48:31Z-
dc.date.available2017-04-21T06:48:31Z-
dc.date.issued2011en_US
dc.identifier.isbn978-1-4398-7139-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/135543-
dc.description.abstractIn this work, a full 3D finite element analysis for the silicon nitride (Si3N4) subwavelength structure (SWS) deposited on the antireflection coating (ARC) of a-Si thin film solar cell is conducted. We investigate the reflectance property of cylinder-, right circular cone-, and square pyramid shape of Si3N4 SWS with various heights and incident angles. The results show that the pyramid shape of SWS possesses the best reflectance property in the optical region from 400 am to 1000 rim. Comparison with the RCWA work is also reported.en_US
dc.language.isoen_USen_US
dc.subjectElement Analysisen_US
dc.subjectSilicon Nitrideen_US
dc.subjectSub Wavelength Structureen_US
dc.subjectShape Effecten_US
dc.subjectMorphological Effecten_US
dc.subjectAntireflection Coatingen_US
dc.subjectReflectanceen_US
dc.subjectSolar Cellen_US
dc.subjectRigorous Coupled-Wave Approachen_US
dc.titleComprehensive Study on Reflectance of Si3N4 Subwavelength Structures for Silicon Solar Cell Applications Using 3D Finite Element Analysisen_US
dc.typeProceedings Paperen_US
dc.identifier.journalNANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2en_US
dc.citation.spage21en_US
dc.citation.epage24en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000394060800006en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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