完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Hsiang | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.date.accessioned | 2017-04-21T06:48:35Z | - |
dc.date.available | 2017-04-21T06:48:35Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.isbn | 978-1-60768-156-4 | en_US |
dc.identifier.issn | 1938-5862 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3360625 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135567 | - |
dc.description.abstract | The reverse-bias operation of the InGaN LED device can shed a light on device reliability problems. Our goal is to use noninvasive optical characterization techniques including surface temperature measurements, 2D XRF( X-ray fluorescent) element analysis, and 2D electroluminescence measurements to visualize the leakage current distribution and examine the origin of the reverse-bias leakage current. The origin of the reverse-bias emission is attributed to imperfect metal contact caused by process variation. Hot electron induced emission due to the leakage current should be the mechanism of the reverse-bias emission from the surface defect and the imperfect contact. The light emission was proved to be relevant to reliability problems in terms of the leakage current. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Reverse-bias Electroluminescence Observation for Reliability Investigations of the InGaN LED | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1149/1.3360625 | en_US |
dc.identifier.journal | CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) | en_US |
dc.citation.volume | 27 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 237 | en_US |
dc.citation.epage | 242 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.identifier.wosnumber | WOS:000313327800039 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |