Transportation model establishment of InGaZnO for thin film transistor device application

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Teng, Li-Feng	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Chou, Yi-Teh	en_US
dc.contributor.author	Fan, Yang-Shun	en_US
dc.date.accessioned	2017-04-21T06:48:37Z	-
dc.date.available	2017-04-21T06:48:37Z	-
dc.date.issued	2010	en_US
dc.identifier.issn	1883-2490	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135583	-
dc.description.abstract	The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased loll and large Vth shifts, while N-2 and O-2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.	en_US
dc.language.iso	en_US	en_US
dc.title	Transportation model establishment of InGaZnO for thin film transistor device application	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3	en_US
dc.citation.spage	1845	en_US
dc.citation.epage	1847	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000393718700493	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文