Electrical Characteristics of Flexible Organic Thin-film Transistors under Bending Conditions

Full metadata record

DC Field	Value	Language
dc.contributor.author	Chen, Fang-Chung	en_US
dc.contributor.author	Chen, Tzung-Da	en_US
dc.date.accessioned	2017-04-21T06:48:37Z	-
dc.date.available	2017-04-21T06:48:37Z	-
dc.date.issued	2010	en_US
dc.identifier.issn	1883-2490	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135586	-
dc.description.abstract	The electrical properties of flexible organic thin-film transistors fabricated on stainless steel substrates were measured under different bending conditions. We found that the compressive strain resulted in an increased mobility while the tensile strain leaded to a decreased one. The strains probably influenced the barrier height between the pentacene grains.	en_US
dc.language.iso	en_US	en_US
dc.title	Electrical Characteristics of Flexible Organic Thin-film Transistors under Bending Conditions	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3	en_US
dc.citation.spage	2239	en_US
dc.citation.epage	2241	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000393718700594	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper