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dc.contributor.authorWang, Shi-Weien_US
dc.contributor.authorLin, Chih-Hengen_US
dc.contributor.authorYang, Yuh-Shyongen_US
dc.contributor.authorLu, Michael S. -C.en_US
dc.date.accessioned2017-04-21T06:48:39Z-
dc.date.available2017-04-21T06:48:39Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-4548-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/135610-
dc.description.abstractInterdigitated microelectrodes integrated with CMOS sensing circuitry are presented in this work for detection of the neurotransmitter dopamine and as an immunosensor with sensitivity enhanced by gold nanoparticles. Microelectrodes covered by the silicon dioxide layer are fabricated through a maskless post-CMOS process. Charged biomolecules bind to the functionalized oxide surface after immobilization, producing a capacitive change for the underlying electrodes. Three electrode designs with gaps from 0.5 mu m to 1 mu m and capacitance values from 13 fF to 925 IF are tested. The capacitance increases with respect to the concentrations of nanoparticle and dopamine. The minimum detectable concentration of dopamine is 540 pM at a 1-Hz bandwidth.en_US
dc.language.isoen_USen_US
dc.titleA CMOS Capacitive Dopamine Sensor with Sub-nM Detection Resolutionen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2009 IEEE SENSORS, VOLS 1-3en_US
dc.citation.spage402en_US
dc.citation.epage+en_US
dc.contributor.department生物科技學系zh_TW
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.identifier.wosnumberWOS:000279891700088en_US
dc.citation.woscount0en_US
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