Reliability of High Power Semiconductor Lasers on Bonding and Mounting Design

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Yu-Chen	en_US
dc.contributor.author	Lin, Gray	en_US
dc.date.accessioned	2017-04-21T06:50:16Z	-
dc.date.available	2017-04-21T06:50:16Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4673-7732-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135719	-
dc.description.abstract	Reliability of high-power semiconductor lasers can be underestimated because of imperfect bonding and improper mounting. The C-mount package of Cu material is replaced with CuW material and high power laser chips are bonded above without AlN submount. For the burn-in test, liquid-metal alloy is applied between C-mount and heatsink to improve thermal contact. The estimated lifetime of 4 W, 808 nm lasers is therefore greatly increased to over 3600 hours.	en_US
dc.language.iso	en_US	en_US
dc.subject	reliability	en_US
dc.subject	lifetime	en_US
dc.subject	eutectic bonding	en_US
dc.subject	thermal resistance	en_US
dc.subject	high power lasers	en_US
dc.title	Reliability of High Power Semiconductor Lasers on Bonding and Mounting Design	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 OPTOELECTRONICS GLOBAL CONFERENCE (OGC)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000378318500012	en_US
dc.citation.woscount	0	en_US
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