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dc.contributor.authorHsu, Chung-Chengen_US
dc.contributor.authorWu, Chen-Kuoen_US
dc.contributor.authorLi, Chi-Kangen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.date.accessioned2017-04-21T06:49:28Z-
dc.date.available2017-04-21T06:49:28Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-8379-7en_US
dc.identifier.issn2158-3234en_US
dc.identifier.urihttp://hdl.handle.net/11536/135778-
dc.description.abstractIn this paper, we have analyzed the strain distribution of the V-pits in light emitting diodes (LEDs). The special geometry and non-uniform distribution introduce the complicated strain and piezoelectric distribution, where it might affect the carrier injection. In the future, we will combine the calculated piezoelectric field with our in-house developed 3D drift-diffusion model to figure out how the carrier inject into LEDs with V-pits.en_US
dc.language.isoen_USen_US
dc.subjectElastic Strainen_US
dc.subjectQuantum Wells (QWs)en_US
dc.subjectV-piten_US
dc.subjectLight Emmitting Diodes (LEDs)en_US
dc.subjectThreading Dislocations (TDs)en_US
dc.title3D Finite Element Strain Analysis of V-Shaped Pits in Light Emitting Diodesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal15TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES NUSOD 2015en_US
dc.citation.spage7en_US
dc.citation.epage8en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000380401200004en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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