Purely Sidewall InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Da-Wei	en_US
dc.contributor.author	Wu, Yung-Chi	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Chi, Gou-Chung	en_US
dc.contributor.author	Hsu, Lung-Hsing	en_US
dc.contributor.author	Lan, Yu-Pin	en_US
dc.contributor.author	Chen, Yang-Fang	en_US
dc.date.accessioned	2017-04-21T06:49:45Z	-
dc.date.available	2017-04-21T06:49:45Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4673-6834-6	en_US
dc.identifier.issn	2160-5033	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135832	-
dc.description.abstract	A novel purely sidewall InGaN/GaN core-shell nanorod green light-emitting diode (LED) has been demonstrated by 3D dielectric passivation and selective epitaxial growth technologies. The LED device exhibits unprecedented stable emission wavelength and low efficiency droop.	en_US
dc.language.iso	en_US	en_US
dc.subject	nanorod	en_US
dc.subject	core-shell	en_US
dc.subject	selective epitaxial growth	en_US
dc.subject	nonpolar	en_US
dc.subject	light-emitting diode (LED)	en_US
dc.title	Purely Sidewall InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN)	en_US
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	友訊交大聯合研發中心	zh_TW
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	D Link NCTU Joint Res Ctr	en_US
dc.identifier.wosnumber	WOS:000380513000051	en_US
dc.citation.woscount	0	en_US
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