Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kuo, Ming-Hao | en_US |
dc.contributor.author | Chen, Ho-Chane | en_US |
dc.contributor.author | Lai, Wei-Ting | en_US |
dc.contributor.author | Li, Pei-Wen | en_US |
dc.date.accessioned | 2017-04-21T06:49:45Z | - |
dc.date.available | 2017-04-21T06:49:45Z | - |
dc.date.issued | 2015 | en_US |
dc.identifier.isbn | 978-1-4673-7604-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135838 | - |
dc.description.abstract | We demonstrated a novel CMOS approach for the fabrication of high-performance Ge quantum dot (QD) MOSFETs offering great promises as optical switches and transducers for Si-based optical interconnects. Measured photocurrent to dark current ratio (I-ph/I-dark) and photoresponsivities from the Ge QD PT were as high as 272,000 and 1.7 A/W, respectively, under incident power of 20 W at 980 nm illumination. Carrier dynamics in Ge QDs were characterized by applying a depleting voltage pulse to the gate of MOSFET and by time-resolved photoluminescence on Ge QD array. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2015 SILICON NANOELECTRONICS WORKSHOP (SNW) | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000380461900025 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |