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dc.contributor.authorTsai, Jung-Rueyen_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorChang, Hsiu-Fuen_US
dc.contributor.authorShie, Bo-Shiuanen_US
dc.contributor.authorWen, Ting-Tingen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2017-04-21T06:49:44Z-
dc.date.available2017-04-21T06:49:44Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4673-7604-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/135841-
dc.description.abstractField-effect transistors (FETs) with junctionless (JL) channels have recently attracted much attention for various applications, such as metal-oxide semiconductor thin-film transistors (TFTs) [1], memory devices [2] and Si nanowire TFTs [3, 4]. The Si junctionless (JL) transistors employing high dopant concentration (>= 10(19) cm(-3)) in the source, drain, and nano-scaled channel have been demonstrated to provide excellent electrical characteristics. More recently, film profile engineering (FPE) concept for fabricating downscaled ZnO and IGZO TFTs [5, 6] have been proposed to obtain high-on/off current ratio and great subthreshold swing. Nevertheless, it emphasizes a significant issue of source/drain (S/D) series resistance on the downscaled device performance that needs to be further verified. In this work, electrical performance of downscaled N-type Si JL TFTs with FPE channel and conventional ones will be compared with each other by Sentaurus technology computer aided design (TCAD) simulation [7].en_US
dc.language.isoen_USen_US
dc.titleComparison of Electrical Characteristics of N-type Silicon Junctionless Transistors with and without Film Profile Engineering by TCAD Simulationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 SILICON NANOELECTRONICS WORKSHOP (SNW)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:000380461900034en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper