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dc.contributor.authorChen, Hung-Cheen_US
dc.contributor.authorChao, Paul C. -P.en_US
dc.contributor.authorLin, Wei-Chuen_US
dc.contributor.authorSun, Hsiang-Fangen_US
dc.contributor.authorDai, Ming-Zhien_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.date.accessioned2017-04-21T06:49:43Z-
dc.date.available2017-04-21T06:49:43Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-4642-9en_US
dc.identifier.issn1930-0395en_US
dc.identifier.urihttp://hdl.handle.net/11536/135852-
dc.description.abstractThe study presents a new gas sensor made of a novel organic diode with vertical nano-junctions and its low-power, area-efficient readout circuit. There are seven parts included in the readout system. First part is a preamplifier, which is composed of trans-impedance to convert the output current of a gas sensor into voltage. Second part is a peak-detect-and-hold circuit. It can detect the maximum voltage and holds its value, the initial value. Third part is a divider, which is used to calculate the ratio of saturation current to initial current. Fourth part is the saturation detector, which is used to detect when the output current of the VNJ-P3HT diode doesn\'t change anymore (that is, the responses are saturated). Fifth part is the auto-reset circuit, which is used to detect when the sensor device starts to react with gas and reset the voltage value of the peak detect-and-hold circuit. Sixth part is a logic gate and a buffer. When the sensor device is reacting with gas and the responses are saturated, the response result is outputted through the logic gate and buffer. Otherwise, the zero is outputted. Seventh part is a micro-processor control unit (MCU). STM32 is the CPU of proposed MCU by ALIENTEK. The ADC of MCU is used to transform the output data of readout circuit. Then the LCD displays the results. The designed circuit is accomplished by Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 mu m 2P4M 3.3V mixed-signal CMOS process.en_US
dc.language.isoen_USen_US
dc.titleA New Gas Sensor of a Thin-Film Diode and Low-Power, Area-Efficient Readout Circuiten_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE SENSORSen_US
dc.citation.spage1307en_US
dc.citation.epage1310en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000379846100315en_US
dc.citation.woscount0en_US
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