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dc.contributor.authorYan, Tzu-Chaoen_US
dc.contributor.authorLi, Chun-Hsingen_US
dc.contributor.authorLai, Chih-Weien_US
dc.contributor.authorChen, Wei-Chengen_US
dc.contributor.authorChao, Tzu-Yuanen_US
dc.contributor.authorKuo, Chien-Nanen_US
dc.date.accessioned2017-04-21T06:49:42Z-
dc.date.available2017-04-21T06:49:42Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-4089-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/135867-
dc.description.abstractThis paper presents a THz imaging system composed of a signal source and a signal sensor in CMOS technology The signal source integrates a 338 GHz oscillator in 40-nm CMOS and an antenna array on a Benzocyclobutene (BCB) carrier using the SoP (System-on-Package) technique. The measured EIRP achieves +8 dBm. The signal sensor is implemented in 0.18 mu m CMOS. The measured maximum responsivity is 632 kV/W at 332 GHz. The signal source and signal sensor consume dc power of 37.5 mW and 7.92 mW, respectively. The resolution of the proposed THz imaging system is 4 mm.en_US
dc.language.isoen_USen_US
dc.subjectTHz imaging systemen_US
dc.subjectCMOSen_US
dc.subjectsignal sourceen_US
dc.subjectsignal sensoren_US
dc.subjectSystem-on-Package (SoP)en_US
dc.titleCMOS THz Transmissive Imaging Systemen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)en_US
dc.citation.spage169en_US
dc.citation.epage172en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380484900043en_US
dc.citation.woscount1en_US
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