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dc.contributor.authorAhn, Hyeyoungen_US
dc.contributor.authorLee, Min-Tseen_US
dc.date.accessioned2017-04-21T06:48:19Z-
dc.date.available2017-04-21T06:48:19Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-55752-968-8en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/135873-
dc.description.abstractSpectral dependence of nonlinear optical absorption cross-section (sigma) near and below the bandgap (E-g) is measured for InN by using Z-scan technique. A drastic increase of sigma near E-g can be understood by the band-filling model.en_US
dc.language.isoen_USen_US
dc.titleSpectral Dependence of Third-Order Nonlinear Optical Properties in InNen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000370627101487en_US
dc.citation.woscount0en_US
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