POST SULFURIZATION EFFECT ON THE MOS2 GROWN BY PULSED LASER DEPOSITION

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ho, Yen-Teng	en_US
dc.contributor.author	Yen, Tzu-Chun	en_US
dc.contributor.author	Luong, Tien-Tung	en_US
dc.contributor.author	Wei, Lin-Lung	en_US
dc.contributor.author	Tu, Yung-Yi	en_US
dc.contributor.author	Chu, Yung-Ching	en_US
dc.contributor.author	Hsu, Hung-Ru	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.date.accessioned	2017-04-21T06:48:55Z	-
dc.date.available	2017-04-21T06:48:55Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-4673-8805-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135894	-
dc.description.abstract	Two inches size with high quality layered growth of MoS2 was achieved by PLD on c-plane sapphire substrate. 2-3 monolayer MoS2 was obtained within 2 inches wafer estimated from Raman analysis and confirmed by cross-sectional view of TEM. Additionally, the oxide states of Mo 3d core level spectra of MoS2, analyzed by XPS, can be effectively reduced by adopting a post sulfurization process in H2S. The post process also improve the photoluminescence (PL) of MoS2 as well as the electrical characteristic of MoS2 FET due to elimination the Mo oxide in the grown film.	en_US
dc.language.iso	en_US	en_US
dc.title	POST SULFURIZATION EFFECT ON THE MOS2 GROWN BY PULSED LASER DEPOSITION	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000381743000193	en_US
dc.citation.woscount	0	en_US
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