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dc.contributor.authorFu, Sze Mingen_US
dc.contributor.authorZhong, Yan Kaien_US
dc.contributor.authorYan, Sheng Lunen_US
dc.contributor.authorJu, Nyan Pingen_US
dc.contributor.authorChen, Po Yuen_US
dc.contributor.authorKao, Ming-Hsuanen_US
dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorLai, Yi-Chunen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorLin, Alberten_US
dc.date.accessioned2017-04-21T06:49:12Z-
dc.date.available2017-04-21T06:49:12Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-7944-8en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/135907-
dc.description.abstractThe material absorption can be enhanced by increased photonic density of state(PDOS). Here we demonstrate that through the design in the Brillouin zone of nanophotonic light trapping structures, the PDOS can be effectively increased. The theoretical work using rigorously coupled wave calculation shows the increased spectral absorption and the optimal quasi-guided mode excitations in terms of their quality factors and the number of excited modes. The experimental work is currently ongoing and the preliminary result confirms enhanced short circuit current if the PDOS is properly adjusted. Unlike random structures, the proposed Brillouin zone engineered structures are more feasible from modeling and device process viewpoints.en_US
dc.language.isoen_USen_US
dc.subjectBrillouin zoneen_US
dc.subjectnanophotonic light trappingen_US
dc.subjectphotonic density of state (PDOS)en_US
dc.subjectsolar cellen_US
dc.titlePhotonic Density of State (PDOS) Enhancement by Brillouin Zone Engineeringen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000369992902077en_US
dc.citation.woscount0en_US
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