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dc.contributor.authorKao, Jen-Chiehen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorLo, Tai-Linen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2017-04-21T06:49:00Z-
dc.date.available2017-04-21T06:49:00Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-8767-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/135916-
dc.description.abstractA V-band dual-conversion downconverter using 0.35 mu m SiGe BiCMOS process is demonstrated in this paper. This downconverter contains three sub-circuits, a V-band Schottky-diode RF mixer with Marchand balun, a 15-GHz low-noise IF buffer amplifier, and an IF Gilbert mixer. The Schottky diode has high cutoff frequency because of the n+ buried layer in the SiGe BiCMOS process. Thus, a fundamental ring-mixer is employed as the RF mixer. A Marchand balun has a broadband feature, and the feature has been used to achieve converter for high frequency circuit applications. In addition to this, a low-noise buffer amplifier is used to provide enough gain performance. By combining these advantages, a dual-conversion downconverter is successfully achieved. The downconverter has about 6 dB conversion loss, 18 GHz RF bandwidth, 800 MHz IF bandwidth and about -6 dBm IP1dB when LO1 power is 5 dBm and LO2 power is 8 dBm.en_US
dc.language.isoen_USen_US
dc.subjectdual-conversion downconverteren_US
dc.subjectSchottky diode mixeren_US
dc.subjectMarchand balunen_US
dc.subjectSiGe BiCMOSen_US
dc.titleV-Band Dual-Conversion Down-Converter with Schottky-Diode Ring-Mixer Using 0.35 mu m SiGe BiCMOS Processen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000382378800208en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper