完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, YH | en_US |
dc.contributor.author | Huang, YC | en_US |
dc.contributor.author | Lin, YY | en_US |
dc.contributor.author | Chen, YE | en_US |
dc.date.accessioned | 2014-12-08T15:18:53Z | - |
dc.date.available | 2014-12-08T15:18:53Z | - |
dc.date.issued | 2005-06-01 | en_US |
dc.identifier.issn | 0946-2171 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/s00340-005-1799-0 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13591 | - |
dc.description.abstract | We report to the best of our knowledge the lowest switching voltage in an electro-optically Q-switched Nd: YVO4 laser by using a 13-mm long, 14-μ m-period PPLN crystal as a Pockels cell. A switching voltage as low as ∼ 50V in the PPLN crystal was sufficient to hold off the lasing of the Q-switched laser at a pump power more than two times above its continuous-wave threshold. When the PPLN Q-switch was driven by a 100-V voltage at 6.5 kHz, we obtained 0.9-kW laser peak power from this 1-W diode-pumped Nd: YVO4 laser system with 13% output coupling. When the PPLN Pockels cell was cascaded with a 5-cm long, 30-μ m-period PPLN crystal, we produced ∼ μ J/pulse energy at 1.59 μ m from optical parametric generation inside the actively Q-switched laser. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Intracavity PPLN crystals for ultra-low-voltage laser Q-switching and high-efficiency wavelength conversion | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/s00340-005-1799-0 | en_US |
dc.identifier.journal | APPLIED PHYSICS B-LASERS AND OPTICS | en_US |
dc.citation.volume | 80 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 889 | en_US |
dc.citation.epage | 896 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000229576900017 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |