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dc.contributor.authorChen, YHen_US
dc.contributor.authorHuang, YCen_US
dc.contributor.authorLin, YYen_US
dc.contributor.authorChen, YEen_US
dc.date.accessioned2014-12-08T15:18:53Z-
dc.date.available2014-12-08T15:18:53Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn0946-2171en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00340-005-1799-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/13591-
dc.description.abstractWe report to the best of our knowledge the lowest switching voltage in an electro-optically Q-switched Nd: YVO4 laser by using a 13-mm long, 14-μ m-period PPLN crystal as a Pockels cell. A switching voltage as low as ∼ 50V in the PPLN crystal was sufficient to hold off the lasing of the Q-switched laser at a pump power more than two times above its continuous-wave threshold. When the PPLN Q-switch was driven by a 100-V voltage at 6.5 kHz, we obtained 0.9-kW laser peak power from this 1-W diode-pumped Nd: YVO4 laser system with 13% output coupling. When the PPLN Pockels cell was cascaded with a 5-cm long, 30-μ m-period PPLN crystal, we produced ∼ μ J/pulse energy at 1.59 μ m from optical parametric generation inside the actively Q-switched laser.en_US
dc.language.isoen_USen_US
dc.titleIntracavity PPLN crystals for ultra-low-voltage laser Q-switching and high-efficiency wavelength conversionen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00340-005-1799-0en_US
dc.identifier.journalAPPLIED PHYSICS B-LASERS AND OPTICSen_US
dc.citation.volume80en_US
dc.citation.issue7en_US
dc.citation.spage889en_US
dc.citation.epage896en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000229576900017-
dc.citation.woscount7-
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